Measurement of carrier diffusion length in /spl beta/-FeSi/sub 2/ thin films for solar cell application

Author

Ootsuka, Teruhisa ; Wang, Shinan ; Otogawa, Naotaka ; Fukuzawa, Yasuhiro ; Suzuki, Yasuhito ; Liu, Zhengxin ; Osamura, Masato ; Mise, Takahiro ; Nakayama, Yasuhiko ; Tanoue, Hisao ; Makita, Yunosuke

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Japan

Volume

1

fYear

2003

fDate

18-18 May 2003

Firstpage

148

Abstract

The minority carrier lifetime /spl tau/ in a /spl beta/-FeSi/sub 2/ film has been estimated by measuring the photocurrent decay and by fitting the decay curve according to the decay theory. /spl beta/-FeSi/sub 2/ films were prepared on Si substrates by molecular beam epitaxy technique, /spl tau/ was found to be more than 10 /spl mu/sec in all films, two orders greater than those in /spl beta/-FeSi/sub 2/ bulk samples. The diffusion length L was calculated from /spl tau/ and diffusion constant D that was obtained from Hall mobilities by using the Einstein relation. L was estimated to be longer than 20 /spl mu/m, much longer than the film thickness (0.3 /spl mu/m).

Keywords

Hall mobility; carrier lifetime; diffusion; iron compounds; minority carriers; molecular beam epitaxial growth; photoconductivity; semiconductor materials; semiconductor thin films; solar cells; /spl beta/-FeSi/sub 2/; Einstein relation; FeSi/sub 2/; Hall mobility; Si; carrier diffusion length; decay theory; diffusion constant; film thickness; minority carrier lifetime; molecular beam epitaxy; photocurrent decay;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305242