Characterization of CuIn(S,Se)/sub 2/ thin films prepared by thermal crystallization from Cu-In-Se precursor in S/Se atmosphere

Author

Yamaguchi, Toshiyuki ; Nakashima, Mitsuki ; Yoshida, Akira

Author_Institution

Dept. of Electr. Eng., Wakayama Coll. of Technol., Gobo-shi, Japan

Volume

1

fYear

2003

fDate

18-18 May 2003

Firstpage

410

Abstract

CuIn(S,Se)/sub 2/ thin films were prepared by thermal crystallization from Cu-In-Se precursor in S/Se atmosphere for photovoltaic device applications and their properties were investigated. The S/(S+Se) mole ratio in the crystallized thin films was changed from 0 to 0.93 in monotone with increasing the S/(S+Se) mole ratio in atmosphere. The thin films had a chalcopyrite CuIn(S,Se)/sub 2/ structure and the preferred orientation to the 112 plane. The a- and c-axis constants were decreased with increasing the S/(S+Se) mole ratio in the thin films. The SEM images demonstrated that the grain sizes in CuIn(S,Se)/sub 2/ thin films decreased with the increase in the S/(S+Se) mole ratio.

Keywords

copper compounds; crystallisation; grain size; indium compounds; lattice constants; scanning electron microscopy; semiconductor thin films; ternary semiconductors; texture; CuIn(SSe)/sub 2/; S/Se atmosphere; SEM image; a-axis constant; c-axis constant; chalcopyrite structure; grain size; photovoltaic device; preferred orientation; thermal crystallization; thin film;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305307