Annealing effects of CuInS/sub 2/ thin film solar cells prepared from one-step electrodeposited Cu-In-S precursors

Author

Nakamura, Shigeyuki

Author_Institution

Tsuyama Nat. Coll. of Technol., Okayama, Japan

Volume

1

fYear

2003

fDate

18-18 May 2003

Firstpage

422

Abstract

The influences of post-deposition annealing in N/sub 2/ or H/sub 2/S atmosphere on film properties including cell performance were investigated to establish the electrodeposition technique as a method of CuInS/sub 2/-based solar cell fabrication. The single phase CuInS/sub 2/ films with improved crystallinity could be obtained by H/sub 2/S annealing of one-step electrodeposited Cu-In-S precursors. The film composition and surface morphology were hardly changed at the temperature of 200 /spl sim/ 600/spl deg/C. The best cell efficiency of 1.12% (V/sub oc/=0.456, l/sub sc/=8.74, F.F. =0.281) was obtained for the first time by using CuInS/sub 2/-based solar cell prepared from the one-step electrodeposited precursor.

Keywords

annealing; copper compounds; electrodeposition; indium compounds; semiconductor thin films; short-circuit currents; solar cells; surface composition; surface morphology; ternary semiconductors; 200 to 600 degC; CuInS/sub 2/; annealing effects; cell efficiency; cell performance; crystallinity; electrodeposition technique; film composition; film properties; post-deposition annealing; surface morphology; thin film solar cell;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305310