Developement of advanced materials for fabricating thin-film absorber layers

Author

Banger, Kulbinder K. ; Jin, Michael H. ; Harris, J.D. ; Cowen, Jonathan E. ; Hepp, Aloysius F.

Author_Institution

Ohio Aerosp. Inst., Brook Park, OH, USA

Volume

1

fYear

2003

fDate

18-18 May 2003

Firstpage

426

Abstract

The syntheses and thermal modulation of ternary single source precursors, based on the [{LR}/sub 2/M/sup 1/(SR´)/sub 2/In(SR´)/sub 2/] architecture in good yields are described. Thermogravimetric analyses (TGA) and Low temperature Differential Scanning Caloriometry, (DSC) demonstrate that controlled manipulation of the steric and electronic properties of either the group five-donor and/or chalcogenide moiety permits directed adjustment of the thermal stability and physical properties of the precursors. TGA-evolved X-ray diffraction studies, EDS and SEM demonstrate that these derivatives afford single-phase I-III-VI/sub 2/ materials at low temperature. In the case where I = Ag, thin films of I-III/sub 5/-VI/sub 8/ type semiconductor are obtained.

Keywords

X-ray diffraction; differential scanning calorimetry; scanning electron microscopy; semiconductor thin films; solar absorber-convertors; ternary semiconductors; thermal stability; EDS; SEM; X-ray diffraction; advanced material; chalcogenide moiety; electronic properties; low temperature differential scanning calorimetry; ternary single source precursor; thermal modulation; thermal stability; thermogravimetric analysis; thin-film absorber layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305311