• DocumentCode
    413634
  • Title

    Multi-junction cells with monolithic bypass diodes

  • Author

    Sharps, P.R. ; Stan, M.A. ; Aiken, D.J. ; Clevenger, B. ; Hills, J.S. ; Fatemi, N.S.

  • Author_Institution
    EMCORE Photovoltaics, Albuquerque, NM, USA
  • Volume
    1
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    626
  • Abstract
    Bypass diodes are attached electrically parallel (but with opposite polarity) to solar cells such that when the cells are reverse biased, the bypass diodes are forward biased, passing current and preventing the cells from going into reverse breakdown. For III-V single and multi-junction space cells, discrete silicon bypass diodes have typically been used. In this paper, we present a monolithic bypass diode, grown on top of the III-V solar cell. The bypass diode is of opposite polarity to the cell, but electrically parallel to the cell. The advantage of the monolithic diode over the discrete diode is the reduction in interconnects and handling required during the interconnecting of cells into strings. We present performance, reliability, and space qualification results for the monolithic bypass diode. Of particular importance are the diode reverse bias leakage current and the forward bias turn-on voltage. Large area (/spl sim/30 cm/sup 2/) cell/monolithic diodes with efficiencies of 28% have been made.
  • Keywords
    III-V semiconductors; leakage currents; photodiodes; semiconductor device breakdown; semiconductor device reliability; solar cells; 28 percent; diode reverse bias leakage current; forward bias turn-on voltage; interconnect; monolithic bypass diode; multi-junction cell; performance; reliability; reverse breakdown; solar cell; space cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1305359