DocumentCode
413634
Title
Multi-junction cells with monolithic bypass diodes
Author
Sharps, P.R. ; Stan, M.A. ; Aiken, D.J. ; Clevenger, B. ; Hills, J.S. ; Fatemi, N.S.
Author_Institution
EMCORE Photovoltaics, Albuquerque, NM, USA
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
626
Abstract
Bypass diodes are attached electrically parallel (but with opposite polarity) to solar cells such that when the cells are reverse biased, the bypass diodes are forward biased, passing current and preventing the cells from going into reverse breakdown. For III-V single and multi-junction space cells, discrete silicon bypass diodes have typically been used. In this paper, we present a monolithic bypass diode, grown on top of the III-V solar cell. The bypass diode is of opposite polarity to the cell, but electrically parallel to the cell. The advantage of the monolithic diode over the discrete diode is the reduction in interconnects and handling required during the interconnecting of cells into strings. We present performance, reliability, and space qualification results for the monolithic bypass diode. Of particular importance are the diode reverse bias leakage current and the forward bias turn-on voltage. Large area (/spl sim/30 cm/sup 2/) cell/monolithic diodes with efficiencies of 28% have been made.
Keywords
III-V semiconductors; leakage currents; photodiodes; semiconductor device breakdown; semiconductor device reliability; solar cells; 28 percent; diode reverse bias leakage current; forward bias turn-on voltage; interconnect; monolithic bypass diode; multi-junction cell; performance; reliability; reverse breakdown; solar cell; space cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305359
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