Title :
Performance instability in n-type PERT silicon solar cells
Author :
Zhao, Jianhua ; Schmidt, J. ; Wang, Aihua ; Zhang, Guangchun ; Richards, Bryce S. ; Green, Martin A.
Author_Institution :
Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, New South Wales Univ., Sydney, NSW, Australia
Abstract :
PERT (passivated emitter, rear totally-diffused) cells on CZ and FZ n-type silicon substrates have demonstrated high efficiencies of 21.1% and 21.9%, respectively. Performance loss has been observed in these cells after over two-year storage. A further loss was observed when these cells were illuminated under one-sun intensity using ELH halogen projection lamps. The lightly doped boron emitters and strong surface depletion might be the cause for such loss, which appear to have an electrostatic origin and to be largely reversible.
Keywords :
boron; elemental semiconductors; passivation; semiconductor doping; silicon; solar cells; 21.1 percent; 21.9 percent; ELH halogen projection lamp; Si:B; cell efficiency; lightly doped boron emitter; n-type PERT silicon solar cell; one-sun intensity; passivated emitter rear totally-diffused cell; performance instability; performance loss; surface depletion;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
