Interfacial structure and current transport properties of sputter-deposited ZnO:Al/c-Si heterojunction solar cells

Author

Song, Dengyuan ; Neuhaus, Dirk-Holger ; Aberle, Armin G.

Author_Institution

Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, Univ. of New South Wales, Sydney, NSW, Australia

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1017

Abstract

ZnO:Al/n-Si heterojunction solar cells were made by rf magnetron sputtering. Their interfacial structure was analysed by transmission electron microscopy (TEM). These TEM studies reveal the existence of a non-intentionally grown tunnel oxide layer between the Si wafer and the ZnO:Al film, and thus the devices are actually of the type SIS. The current transport properties of the heterojunction are investigated by means of current-voltage measurements in the temperature range 283 to 363K. Analysis of the experimental results suggests that the dominant current transport mechanism in these devices, at intermediate dark forward bias voltages, is trap-assisted multistep tunneling.

Keywords

II-VI semiconductors; aluminium; electrical resistivity; elemental semiconductors; interface structure; semiconductor heterojunctions; semiconductor thin films; silicon; solar cells; sputtered coatings; transmission electron microscopy; tunnelling; wide band gap semiconductors; zinc compounds; 283 to 363 K; Si wafer; TEM; ZnO:Al film; ZnO:Al-Si; ZnO:Al/c-Si heterojunction solar cells; current transport properties; current-voltage measurements; interfacial structure; intermediate dark forward bias voltages; resistance; rf magnetron sputtering; sputter deposition; transmission electron microscopy; trap assisted multistep tunneling; tunnel oxide layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306084