P-type silicon heterojunction solar cells with different interfaces and surface structures

Results of an attempt to find a technological solution for fabrication of high-efficiency heterojunction (HJ) solar cells on p-type Si substrates are presented. Comparative analysis of HJ solar cells fabricated on p-type Czhochralski-grown (Cz) silicon with or without isotropic acid texturization in combination with a thin intermediate porous layer is performed. It is shown that the HJ cells performed on the textured surface have a higher efficiency than those that performed on the conventionally polished surface. It is concluded that the porous intermediate layer serves as a effective barrier providing a protection of silicon substrate from shunts which appear during the deposition of the ITO layer. Conversion efficiencies above 15% achieved for HJ solar cells without high-efficiency features by using a porous intermediate layer on a middle-level quality p-type CZ Si.