Highly moisture-resistive SiN/sub x/ films by catalytic chemical vapor deposition and their application to passivation and antireflection coating for crystalline Si solar cells

Author

Matsumura, Hideki ; Kikkawa, Akiko ; Tsutsumi, Takayuki ; Masuda, Atsushi ; Izumi, Akira ; Takahashi, Masatoshi ; Ohtsuka, Hiroyuki ; Moschner, Jens D.

Author_Institution

Japan Adv. Inst. of Sci. & Technol., Ishikawa, Japan

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1147

Abstract

SiN/sub x/ films prepared by catalytic chemical vapour deposition (Cat-CVD) are applied to passivation and antireflection coating for crystalline Si solar cells. SiN/sub x/ passivation by Cat-CVD with or without nitridation before SiN/sub x/ deposition was examined. Both quite high carrier lifetime of 600 /spl mu/s and low surface recombination velocity of 20-30 cm/s were obtained and these values were comparable to those obtained using remote plasma-enhanced chemical vapour deposition. Successive in-situ exposure of NH/sub 3/-decomposed species after SiN/sub x/ deposition also reduces the surface recombination velocity.

Keywords

antireflection coatings; carrier lifetime; catalysis; chemical vapour deposition; dielectric thin films; elemental semiconductors; nitridation; passivation; semiconductor thin films; silicon; silicon compounds; solar cells; surface recombination; 20 to 30 cm/s; 600 mus; NH/sub 3/-decomposition; Si; SiN/sub x/; SiN/sub x/ deposition; antireflection coating; carrier lifetime; catalytic CVD; catalytic chemical vapour deposition; crystalline Si solar cells; highly moisture resistive SiN/sub x/ films; nitridation; passivation; remote plasma enhanced chemical vapour deposition; surface recombination velocity;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306118