Multicrystalline LLC-Si thin film solar cells on low temperature glass

Author

Andrä, Gudrun ; Bergmann, Joachim ; Falk, Fritz ; Ose, Ekkehart

Author_Institution

Inst. fur Phys. Hochtechnol., Jena, Germany

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1174

Abstract

Multicrystalline silicon thin film solar cells with a grain size of about 100 /spl mu/m were prepared on a borosilicate glass substrate by the LLC (Layered Laser Crystallization) process. This process consists of depositing a-Si by PECVD, crystallizing a highly p-doped seed layer by scanning the beam of a cw laser, and epitaxially thickening the seed by further depositing a-Si and applying pulses of an excimer laser periodically during deposition. Doping profiles for absorber and emitter are introduced by adding diborane or phosphine during PECVD. The seed acts as a transparent electrode. Solar cells 2 /spl mu/m thick show a V/sub oc/ of 545 mV, a fill factor of up to 71%, and an efficiency of 3.3%.

Keywords

amorphous semiconductors; boron; crystallisation; doping profiles; elemental semiconductors; grain size; impurity distribution; laser beam effects; phosphorus; plasma CVD; semiconductor growth; semiconductor thin films; silicon; solar cells; 2 micron; 545 mV; B/sub 2/O/sub 3/-SiO/sub 2/; PECVD; Si:B,P; amorphous Si deposition; borosilicate glass substrate; diborane; doping profiles; excimer laser pulse; fill factor; grain size; layered laser crystallization process; multicrystalline silicon thin film solar cells; p-doped seed layer; phosphine; transparent electrode;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306125