Structural properties of polycrystalline silicon seed layers made on glass by solid-phase crystallisation

Author

Roth, K. ; Goldschmidt, J.C. ; Puzzer, T. ; Chuangsuwanich, N. ; Vogl, B. ; Aberle, A.G.

Author_Institution

Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, Univ. of New South Wales, Sydney, NSW, Australia

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1202

Abstract

We made high-quality n/sup +/-doped polycrystalline silicon (poly-Si) thin-films on glass for a prospective use as seed layers for subsequent epitaxial growth of poly-Si thin-film solar cells. The seed layers are less than 200 nm thick, have a grain size of up to 2 /spl mu/m, and were made from PECVD-deposited phosphorus-doped a-Si precursor layers that were thermally crystallised ("solid-phase crystallisation", SPC) at about 600/spl deg/C using various temperature-time profiles. In this paper we present the structural properties of these SPC poly-Si films on glass, as determined by transmission electron microscopy and focussed ion beam investigations.

Keywords

crystallisation; elemental semiconductors; grain size; plasma CVD coatings; semiconductor epitaxial layers; silicon; solar cells; transmission electron microscopy; 600 degC; PECVD; Si; epitaxial growth; glass; grain size; ion beam effects; plasma enhanced chemical vapour deposition; polycrystalline silicon seed layers; polycrystalline silicon thin films; solar cells; solid phase crystallisation; structural properties; thermal crystallisation; transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306132