Electrical and optical properties of polycrystalline silicon seed layers made on glass by solid-phase crystallisation

Author

Goldschmidt, J.C. ; Roth, K. ; Chuangsuwanich, N. ; Sproul, A.B. ; Vogl, B. ; Aberle, A.G.

Author_Institution

Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, Univ. of New South Wales, Sydney, NSW, Australia

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1206

Abstract

We used solid-phase crystallisation (SPC) of PECVD-deposited doped amorphous silicon (a-Si:H) on planar and textured glass to produce polycrystalline silicon (poly-Si) seed layers for subsequent epitaxial silicon growth. In this paper we present the effects of several parameters (SPC temperature profile, barrier layer on the glass, doping level of the a-Si) on the specific resistivity and the optical properties of the resulting poly-Si films. A low specific resistivity of 8 m/spl Omega/cm was achieved on barrier-coated textured glass for 100-nm a-Si:H films with a doping step, using a step-like SPC process (1 hr at 620/spl deg/C followed by 39.5 hrs at 580/spl deg/C). Modelling of the measured transmission spectra shows that the refractive index of the poly-Si films is very close to that of single-crystalline silicon.

Keywords

amorphous semiconductors; crystallisation; electrical resistivity; elemental semiconductors; hydrogen; plasma CVD coatings; refractive index; semiconductor doping; semiconductor epitaxial layers; silicon; ultraviolet spectra; 1 hr; 100 nm; 39.5 hr; 580 degC; 620 degC; 8 mohmcm; PECVD-deposited doped amorphous silicon; Si:H; barrier coated textured glass substrate; doping level; electrical properties; epitaxial silicon growth; optical properties; planar glass substrate; plasma enhanced chemical vapour deposition; poly-Si films; polycrystalline silicon seed layers; refractive index; solid phase crystallisation temperature profile; specific resistivity; transmission spectra;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306133