Very low temperature emitter growth n/sup +/p solar cells on 2 /spl mu/m poly-Si/Al/sub 2/O/sub 3/ substrates

Author

Shimokawa, R. ; Takato, H. ; Abe, H. ; Yamanaka, M. ; Takahashi, T. ; Hidaka, T.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Japan

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1245

Abstract

We have tried the low temperature n-type emitter growth to obtain high open circuit voltages (Voc) as an alternative to the diffusion technology. The quality of low temperature n/sup +/ poly-Si/p poly-Si/Al/sub 2/O/sub 3/ solar cells were investigated through the transmission electron microscopy and photovoltaic I-V characteristics. High quality poly-Si/Al/sub 2/O/sub 3/ substrates having a few dislocations and stacking faults without strain were obtained. Also, relatively-high Voc solar cells could be fabricated at very low temperature less than 200/spl deg/C by standard plasma-enhanced chemical vapor deposition (PECVD).

Keywords

alumina; dislocations; elemental semiconductors; photovoltaic effects; plasma CVD; semiconductor growth; semiconductor thin films; silicon; solar cells; stacking faults; transmission electron microscopy; 2 micron; PECVD; Si-Si-Al/sub 2/O/sub 3/; dislocations; high open circuit voltages; low temperature n-type emitter growth; n/sup +/p solar cells; photovoltaic current-voltage curves; plasma enhanced chemical vapor deposition; polycrystalline Si-polycrystalline Si-Al/sub 2/O/sub 3/ solar cells; polysilicon-Al/sub 2/O/sub 3/ substrates; stacking faults; transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306143