Title :
Study of aluminum-induced crystallization process using sputtered Al layer
Author :
Kim, Jiyoung ; Kim, Daewon ; Lee, Soohong
Author_Institution :
Samsung SDI Co. Ltd., Gyeonggi-Do, South Korea
Abstract :
To grow smooth and continuous polycrystalline Si (poly-Si) films by aluminum-induced crystallization (AIC), both of the Al and a-Si layer were deposited by dc magnetron sputtering. The size of the poly-Si islands and possibly the grain size of the poly-Si films could be increased with higher deposition rate of the Al layer and thicker aluminum oxide interface layer. As a result, it was possible to grow smooth and continuous poly-Si thin films of high crystalline quality by sputtering to deposit precursor layers.
Keywords :
aluminium; crystallisation; elemental semiconductors; grain size; island structure; semiconductor growth; semiconductor thin films; silicon; sputter deposition; Al; Si; aluminum induced crystallization; aluminum oxide interface layer; dc magnetron sputtering; grain size; polycrystalline Si island size; polycrystalline silicon film; sputtered Al layer;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
