Microstructural investigation of polycrystalline silicon thin films re-crystallized by laser-diode

Author

Oka, Fumihito ; Muramatsu, Shin-ichi

Author_Institution

Adv. Res. Center, Hitachi Cable Ltd., Tsuchiura, Japan

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1251

Abstract

We carried out the recrystallization of small-grain-size poly-Si films by means of irradiation with continuous wave (CW) laser diode light (GaAlAs: 840 nm) scanning. The CW laser light produced by the laser diode induced lateral crystallization and yielded polycrystalline silicon with grains longer than 100 /spl mu/m and with widths of up to 20 /spl mu/m. Electron backscattered diffraction measurement (EBSD) was performed to analyze the crystalline structures, including grain shape, size, and orientation. Our measurements revealed that the orientations of the poly-Si films were textured. The mean grain area was over 1000 /spl mu/m/sup 2/.

Keywords

electron backscattering; electron diffraction; elemental semiconductors; grain size; laser beam effects; recrystallisation; semiconductor thin films; silicon; texture; 840 nm; Si; continuous wave laser light scanning irradiation; crystalline structures; electron backscattered diffraction; grain orientation; grain shape; grain size; laser diode; microstructure; polycrystalline silicon thin films; recrystallization; texture;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306145