Productions of Si and Ge thin film single crystalline growth by lateral grapho-epitaxy

Author

Kawabe, Tsutomu ; Yokoyama, Kouichi ; Koide, Takeshi ; Ito, Takabumi ; Minemoto, Takashi ; Takakura, Hideyuki ; Hamakawa, Yoshihiro

Author_Institution

Fac. of Sci. & Eng., Ritsumeikan Univ., Shiga, Japan

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1259

Abstract

A series of systematic investigation on the graphoepitaxial growth of germanium has been carried out by a focused traveling IR line zone heating apparatus assisted with a substrate heater system. The epitaxial sample is a multi-layer thin film having a structure of about 3 /spl mu/m thick of evaporated germanium sandwiched between SiO/sub 2/ films deposited on a [001] texture etched silicon substrate. It has been shown from the result that a clear evidence of the graphoepitaxial growth of germanium is obtained by the X-Ray diffraction pole figure characterizations and scanning electron microscope images.

Keywords

X-ray diffraction; elemental semiconductors; germanium; liquid phase epitaxial growth; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; silicon; surface morphology; surface texture; zone melting; Ge thin film; IR line zone heating; Si; Si thin film; SiO/sub 2/ films; SiO/sub 2/-Ge-SiO/sub 2/-Si; X-Ray diffraction; lateral graphoepitaxial growth; multilayer thin film; pole figure; scanning electron microscope images; single crystalline growth; texture;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306147