Title :
Productions of Si and Ge thin film single crystalline growth by lateral grapho-epitaxy
Author :
Kawabe, Tsutomu ; Yokoyama, Kouichi ; Koide, Takeshi ; Ito, Takabumi ; Minemoto, Takashi ; Takakura, Hideyuki ; Hamakawa, Yoshihiro
Author_Institution :
Fac. of Sci. & Eng., Ritsumeikan Univ., Shiga, Japan
Abstract :
A series of systematic investigation on the graphoepitaxial growth of germanium has been carried out by a focused traveling IR line zone heating apparatus assisted with a substrate heater system. The epitaxial sample is a multi-layer thin film having a structure of about 3 /spl mu/m thick of evaporated germanium sandwiched between SiO/sub 2/ films deposited on a [001] texture etched silicon substrate. It has been shown from the result that a clear evidence of the graphoepitaxial growth of germanium is obtained by the X-Ray diffraction pole figure characterizations and scanning electron microscope images.
Keywords :
X-ray diffraction; elemental semiconductors; germanium; liquid phase epitaxial growth; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; silicon; surface morphology; surface texture; zone melting; Ge thin film; IR line zone heating; Si; Si thin film; SiO/sub 2/ films; SiO/sub 2/-Ge-SiO/sub 2/-Si; X-Ray diffraction; lateral graphoepitaxial growth; multilayer thin film; pole figure; scanning electron microscope images; single crystalline growth; texture;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
