10.21% polycrystalline silicon thin film solar cells on SiO/sub 2/ covered c-Si substrates

Author

Ying, Xu ; Xudong, Li ; Yuan, Yu ; Wenjing, Wang ; Hui, Shen

Author_Institution

Beijing Solar Energy Res. Inst., China

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1276

Abstract

Crystalline silicon thin film solar cells are fabricated by the technique of RTCVD and ZMR on p/sup ++/ c-Si substrates covered by thermal oxidized SiO/sub 2/. 7 /spl mu/m seed layer is deposited by RTCVD and then recrystallized. The scanning rate of the ZMR process is 0.24 mm/s. 20 /spl mu/m active layer is deposited by RTCVD and the p-n junction is formed by phosphorus diffusion. 1040 /spl Aring/ thermal oxidized layer is formed as the antireflective coating. Ti/Pt/Ag electrodes are evaporated as the front and rear contacts by a photolithography process. The best efficiency of the thin film solar cells is 10.21% (AM1.5, 24.5/spl deg/C) with the cell´s area of 1.07 cm/sup 2/.

Keywords

antireflection coatings; chemical vapour deposition; diffusion; elemental semiconductors; oxidation; p-n junctions; photolithography; semiconductor thin films; silicon; solar cells; zone melting recrystallisation; 20 micron; 7 micron; P; RTCVD; Si; SiO/sub 2/-Si; Ti-Pt-Ag electrodes; ZMR; antireflective coating; p-n junction; phosphorus diffusion; photolithography process; polycrystalline silicon thin film solar cells; seed layer; thermal oxidized SiO/sub 2/; thermal oxidized layer; thin film solar cells efficiency;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306152