DocumentCode :
413797
Title :
Progress in high-efficiency emitter-wrap-through cells on medium quality substrates
Author :
Kray, D. ; Dicker, J. ; Osswald, D. ; Leimenstoll, A. ; Glunz, S.W. ; Zimmermann, W. ; Tentsche, K.H. ; Strob, G.
Author_Institution :
Fraunhofer ISE, Freiburg, Germany
Volume :
2
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
1340
Abstract :
One of the most promising cell concepts for high efficiencies on medium quality base material is the emitter-wrap-through (EWT) solar cell. We fabricated solar cells on 1.25 /spl Omega/ cm FZ and 1.4 /spl Omega/ cm Cz(B) material. The performance of EWT, rear contacted cells (RCC) and random-pyramids passivated emitter and rear cells (RP-PERC) on Cz-Si is compared. An EWT efficiency of 18.7% on degraded Cz (/spl tau//sub b/<35 /spl mu/s, W=250 /spl mu/m) outperforms clearly the RCC (14.9%) and even the RP-PERC (18.1%). Spectral response measurements prove the very good collection efficiency of the EWT cells compared to RCC. The cell parameters V/sub oc/, j/sub sc/ and /spl eta/ of EWT and RCC are logged over the entire degradation process and can be fitted very well by a double exponential decay. The high potential for fill factor and therefore efficiency improvement is shown via Suns-V/sub oc/-measurements which indicate a series resistance free fill factor of more than 81%.
Keywords :
carrier lifetime; elemental semiconductors; silicon; solar cells; 1.25 ohmcm; 1.4 ohmcm; Si; bulk diffusion length; collection efficiency; double exponential decay; emitter wrap through solar cell; fill factor; light induced degradation process; random pyramids passivated emitter-rear cells; rear contacted cells; series resistance; solar cell parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1306169
Link To Document :
بازگشت