DocumentCode
413813
Title
Mechanical wafer stability enhancements and texturing effects of remote downstream plasma etching
Author
Schneider, A. ; Pernau, T. ; Peter, K. ; Fath, P.
Author_Institution
Dept. of Phys., Konstanz Univ., Germany
Volume
2
fYear
2003
fDate
18-18 May 2003
Firstpage
1419
Abstract
The mechanical stability of wafer material strongly depends on the solar cell processing steps. In our previous investigations, the largest improvement in wafer stability was achieved by appropriate saw damage removal. The work presented in this paper is concerned with investigations of different saw damage removal techniques that can improve the mechanical wafer stability at the beginning of the solar cell process. We investigated two different stress reducing plasma etching recipes that turned out to provide the same stability improvements as achieved with alkaline etching. Additionally, the plasma etching technique gives a random surface texturing, which results in a lower cell reflectivity, increasing the short circuit current. Experiments were done to find an optimum parameter set of this plasma texturing process to that maintained the open circuit voltages and fill factors achieved with standard alkaline etching.
Keywords
elemental semiconductors; mechanical stability; short-circuit currents; silicon; solar cells; sputter etching; surface texture; Si; alkaline etching; mechanical wafer stability; open circuit voltages; plasma texturing process; remote downstream plasma etching; saw damage removal techniques; short circuit current; solar cell; stress reducing plasma etching; surface texturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1306189
Link To Document