• DocumentCode
    413813
  • Title

    Mechanical wafer stability enhancements and texturing effects of remote downstream plasma etching

  • Author

    Schneider, A. ; Pernau, T. ; Peter, K. ; Fath, P.

  • Author_Institution
    Dept. of Phys., Konstanz Univ., Germany
  • Volume
    2
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    1419
  • Abstract
    The mechanical stability of wafer material strongly depends on the solar cell processing steps. In our previous investigations, the largest improvement in wafer stability was achieved by appropriate saw damage removal. The work presented in this paper is concerned with investigations of different saw damage removal techniques that can improve the mechanical wafer stability at the beginning of the solar cell process. We investigated two different stress reducing plasma etching recipes that turned out to provide the same stability improvements as achieved with alkaline etching. Additionally, the plasma etching technique gives a random surface texturing, which results in a lower cell reflectivity, increasing the short circuit current. Experiments were done to find an optimum parameter set of this plasma texturing process to that maintained the open circuit voltages and fill factors achieved with standard alkaline etching.
  • Keywords
    elemental semiconductors; mechanical stability; short-circuit currents; silicon; solar cells; sputter etching; surface texture; Si; alkaline etching; mechanical wafer stability; open circuit voltages; plasma texturing process; remote downstream plasma etching; saw damage removal techniques; short circuit current; solar cell; stress reducing plasma etching; surface texturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1306189