DocumentCode
413837
Title
New large area PECVD-system for a-SiN:H deposition at 13.56 MHZ
Author
Kenanoglu, A. ; Borchert, D. ; Balli, C. ; Peters, S. ; Zerres, T. ; Rinio, M. ; Huljic, D.M.
Author_Institution
Lab. & Service Center Gelsenkirchen, Fraunhofer Inst. for Solar Energy Syst., Gelsenkirchen, Germany
Volume
2
fYear
2003
fDate
18-18 May 2003
Firstpage
1515
Abstract
In the last years a-SiN/sub x/:H (abbr. "SiN" in this work) has become increasingly important for solar cell manufacturing, because of its unique ability to act as an antireflection coating (AR-coating) and as a passivation layer. A parallel-plate PECVD system constructed by Centrotherm in co-operation with Fraunhofer ISE is installed in the pilot line production for multicrystalline solar cells in Gelsenkirchen . In contrast to 40 kHz generators often used for SiN deposition in commercial system, this device is working with the standard excitation frequency of 13.56 MHz. Higher frequencies are supposed to introduce lower damage to the substrate surface during the deposition. In this work, we show that this system can be used for the deposition of SiN AR-coating layers for solar cell production as well as for high throughput deposition of high-quality surface passivation layers.
Keywords
amorphous state; antireflection coatings; high-frequency effects; hydrogen; optical films; passivation; plasma CVD; silicon compounds; solar cells; 13.56 MHz; SiN antireflection coating layers; SiN:H; amorphous SiN-H deposition; antireflection coating; multicrystalline solar cells; parallel plate PECVD system; pilot line production; plasma enhanced chemical vapour deposition; solar cell manufacturing; solar cell production; substrate surface; surface passivation layers;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1306214
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