Poly-Si cells at a deposition rate of more than 1 nm/s by hot-wire chemical vapour deposition

Author

Rath, J.K. ; Hardeman, A.J. ; van der Werf, C.H.M. ; van Veenendaal, P.A.T.T. ; Rusche, M.Y.S. ; Schropp, R.E.I.

Author_Institution

Phys. of Devices, Utrecht Univ., Netherlands

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1562

Abstract

High silane to hydrogen flow ratios and optimum filament temperatures are the key process parameters to achieve high growth rate poly-silicon films by hot wire CVD deposition using a four-wire assembly. Growth rates up to 7 nm/s have been achieved. The process conditions to incorporate high hydrogen content into the material for passivation of defects and donor states have been identified as high hydrogen dilution and lower filament temperature. Films deposited at 1.3 nm/s showed high ambipolar diffusion length of 132 nm. Incorporating such poly-Si films as i-layer, n-i-p solar cell on stainless steel substrate without back reflector showed an efficiency of 4.4% and a high open circuit voltage of 0.58V.

Keywords

carrier lifetime; chemical vapour deposition; elemental semiconductors; impurity states; passivation; semiconductor growth; semiconductor thin films; silicon; solar cells; 0.58 V; 132 nm; CVD; Si; ambipolar diffusion length; back reflector; defects state; donor state; filament temperature; four wire assembly; hot wire chemical vapour deposition; hydrogen dilution; hydrogen flow; n-i-p solar cell; open circuit voltage; optimum filament temperatures; passivation; polycrystalline silicon films; polycrystalline silicon solar cell; stainless steel substrate;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306225