Title :
Wide band gap buffer effect for amorphous silicon solar cell analyzed by BASREA measurement
Author :
Honda, S. ; Yamazaki, T. ; Tsurukawa, M. ; Takakura, H. ; Hamakawa, Y.
Author_Institution :
Fac. of Sci. & Eng., Ritsumeikan Univ., Shiga, Japan
Abstract :
A systematic investigation has been made to identify the internal electric-field distribution in a-Si:H p-i-n junction solar cells. As a new technique, electroabsorption effect has been employed with electric-field-modulated back surface reflected light a-Si:H p-i-n junction. This back surface reflected electroabsorption(BASREA)signal and the internal electric-field distribution modeling calculated by a-Si:H p-i-n junction solar cell device simulator, that takes into account of p/i interface properties, reveal solar cell properties. It has been shown from the analyses by BASREA and computer simulation that wide band gap buffer in p/i interface produced higher built in potential and enhanced solar cell performance.
Keywords :
amorphous semiconductors; electroabsorption; elemental semiconductors; hydrogen; photovoltaic effects; semiconductor device models; semiconductor junctions; silicon; solar cells; wide band gap semiconductors; Si:H; amorphous silicon solar cell; back surface reflected electroabsorption signal; computer simulation; interface properties; internal electric field distribution; p-i-n junction solar cells; solar cell device simulator; solar cell properties; wide band gap buffer effect;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
