Wide band gap buffer effect for amorphous silicon solar cell analyzed by BASREA measurement

A systematic investigation has been made to identify the internal electric-field distribution in a-Si:H p-i-n junction solar cells. As a new technique, electroabsorption effect has been employed with electric-field-modulated back surface reflected light a-Si:H p-i-n junction. This back surface reflected electroabsorption(BASREA)signal and the internal electric-field distribution modeling calculated by a-Si:H p-i-n junction solar cell device simulator, that takes into account of p/i interface properties, reveal solar cell properties. It has been shown from the analyses by BASREA and computer simulation that wide band gap buffer in p/i interface produced higher built in potential and enhanced solar cell performance.