Title :
Test structure for fixing OPC of 200 nm pitch via chain using inner and outer dummy via array
Author :
Nasuno, Takashi ; Matsubara, Yoshihisa ; Minami, Akiyuki ; Uchida, Noboru ; Kobayashi, Hiromasa ; Aoyama, Hisako ; Tsuda, Hiroshi ; Tsujita, Koichiro ; Wakamiya, Wataru ; Kobayashi, Nobuyoshi
Author_Institution :
Res. Dept.2, Semicond. Leading Edge Technol., Inc., Ibaraki, Japan
Abstract :
A new test structure for fixing OPC (optical proximity correction) is proposed in which inner and outer dummy patterns surrounding an electrically connected 200 nm-pitch via chain array are used. An unconnected outer dummy via chain is designed as a protection dummy pattern for OPE (optical proximity effect) and flare caused by the exposure tool. An unconnected inner dummy via chain is designed to act as dummy array for failure analysis using the OBIRCH (optical beam induced resistance change) method. This test structure can be used for both electrical OPC evaluation and process failure analysis in the 65 nm-node wiring technology and beyond.
Keywords :
OBIC; electric resistance measurement; failure analysis; integrated circuit interconnections; integrated circuit testing; nanoelectronics; photolithography; proximity effect (lithography); 200 nm; 65 nm; OBIRCH method; OPC; OPE; electrical OPC evaluation; electrically connected via chain array; exposure tool flare; inner dummy via array; optical beam induced resistance change method; optical proximity correction; optical proximity effect; outer dummy via array; process failure analysis; protection dummy pattern; test structure; via chain pitch; wiring technology node; Electric resistance; Electrical resistance measurement; Failure analysis; Lead compounds; Lithography; Microelectronics; Process design; Protection; Semiconductor device testing; Wiring;
Conference_Titel :
Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on
Print_ISBN :
0-7803-8262-5
DOI :
10.1109/ICMTS.2004.1309295
