Title :
Process and device reliability characterization techniques for advanced CMOS technology: the issues and methodologies
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This paper will give an overview of more advanced charge pumping and Gated-Diode techniques for the process and reliability characterization of advanced CMOS devices. Its potential use for the device hot carrier reliability study and process characterization, e.g., oxide quality monitor, plasma-induced oxide damage, and STI effects will be presented. More recent developments for 1nm range ultra-thin gate oxide CMOS device applications will also be demonstrated. Further development and the road-blocks of these techniques will be addressed.
Keywords :
CMOS integrated circuits; VLSI; hot carriers; integrated circuit measurement; integrated circuit reliability; interface states; isolation technology; leakage currents; STI effects; advanced CMOS devices; advanced charge pumping techniques; advanced gated-diode techniques; hot carrier reliability; interface traps; oxide quality monitor; oxide trapped charges; plasma-induced oxide damage; process characterization; reliability characterization; sensitive measurement; time dependence; ultrathin gate oxide device; CMOS process; CMOS technology; Charge pumps; Current measurement; Leakage current; Microelectronics; Monitoring; Switches; Testing; Tunneling;
Conference_Titel :
Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on
Print_ISBN :
0-7803-8262-5
DOI :
10.1109/ICMTS.2004.1309308
