Plasma-damage optimization of the liner-removal process for 300 mm 0.13 μm copper dual-damascene BEOL manufacturing

Author

Sun, Shu-Huei ; Chen, Shih-Ming ; Fang, Joseph Weng-Liang ; Huang, Ching-Yu ; Li, Tsai-Chun ; Lin, Chun-Chen ; Ma, Shawming ; Kutney, Michael

Author_Institution

Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan

fYear

2004

fDate

4-6 May 2004

Firstpage

213

Lastpage

216

Abstract

In this paper, an approach for optimizing plasma-charging damage of liner-removal process for 300 mm copper dual-damascene BEOL manufacturing is described. A specially designed cathode was first used to screen the process parameter response on damage performance. Real-time monitoring of etcher parameters during the process provided fast feedback about any plasma transient instability. Implementation of match tune and load preset methodology further improved the plasma transient uniformity to ensure an acceptable plasma-damage performance window from antenna MOS transistor parametric test results.

Keywords

MOSFET; copper; integrated circuit manufacture; integrated circuit metallisation; optimisation; plasma materials processing; semiconductor device manufacture; 0.13 micron; 300 mm; BEOL manufacturing; Cu; antenna MOS transistor parametric test; cathode; copper dual-damascene BEOL manufacturing; etcher parameter; liner removal process; load preset methodology; match tune implementation; plasma charging damage optimization; plasma transient instability; plasma transient uniformity; process parameter response; real time monitoring; Cathodes; Condition monitoring; Copper; Etching; Feedback; Manufacturing processes; Plasma applications; Plasma displays; Plasma materials processing; Pulp manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop

Print_ISBN

0-7803-8312-5

Type

conf

DOI

10.1109/ASMC.2004.1309568

Filename

1309568