Title :
Prospects of emerging new memory technologies
Author :
Lee, S.Y. ; Kim, Kinam
Author_Institution :
Adv. Technol. Dev., Samsung Electron. Co., Ltd., Gyeonggi-Do, South Korea
Abstract :
New types of memories with potentially ideal properties are topic of growing interest. Among the candidates, Ferroelectric RAM, Phase change RAM, and Magnetic RAM appear to be most promising for commercialization. In this paper, these memories will be reviewed in respect of current technology status, technical challenges encountered and solutions for technological barriers.
Keywords :
ferroelectric storage; magnetoresistive devices; random-access storage; technological forecasting; tunnelling magnetoresistance; commercialization; emerging new memory technologies; ferroelectric RAM; magnetic RAM; magnetic tunnel junction; nonvolatile memories; phase change RAM; scaled cell transistors; technical challenges; technological barriers; Dielectrics; Electrodes; Ferroelectric films; Ferroelectric materials; MIM capacitors; Material storage; Nonvolatile memory; Phase change random access memory; Plugs; Random access memory;
Conference_Titel :
Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on
Print_ISBN :
0-7803-8528-4
DOI :
10.1109/ICICDT.2004.1309904
