Integration challenges of new materials and device architectures for IC applications

Author

Nguyen, Bich-yen ; Thean, Aaron ; White, Ted ; Vandooren, Anne ; Sadaka, Marim ; Mathew, Leo ; Barr, Alexander ; Thomas, Shawn ; Zalava, Melissa ; Zhang, Da ; Eades, Debby ; Shi, Zhong-Hai ; Schaeffer, Jamie ; Triyoso, Dina ; Samavedam, Sri ; Vartanian, V

Author_Institution

Freescale Semicond., Technol. Solutions Organ., Austin, TX, USA

fYear

2004

fDate

2004

Firstpage

237

Lastpage

243

Abstract

In this paper, we will detail the issues with new materials being introduced into CMOS devices and present some potential solutions to enable high performance and low power CMOS for the 65nm node and beyond.

Keywords

CMOS integrated circuits; MOSFET; VLSI; capacitance; dielectric thin films; leakage currents; low-power electronics; nanoelectronics; silicon-on-insulator; work function; CMOS devices; FDSOI; FinFET; capacitance equivalent thickness; gate leakage; high performance CMOS; high permittivity dielectric; low power CMOS; metal gate electrodes; new materials; threshold voltage; work function; Application specific integrated circuits; CMOS technology; Dielectric materials; Dielectric substrates; Electrodes; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFET circuits; Thickness control;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on

Print_ISBN

0-7803-8528-4

Type

conf

DOI

10.1109/ICICDT.2004.1309953

Filename

1309953