DocumentCode
41455
Title
Litho-Friendly Decomposition Method for Self-Aligned Double Patterning
Author
Mirsaeedi, Minoo ; Torres, Alvaro Javier ; Anis, Mohab H.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
Volume
21
Issue
8
fYear
2013
fDate
Aug. 2013
Firstpage
1469
Lastpage
1480
Abstract
This paper establishes self-aligned double patterning (SADP) decomposition requirements and proposes a litho-friendly layout decomposition method. First, we explain the SADP-specific printability requirements that should be considered during decomposition. In silico experiments indicate that layout patterns that are printed by the trim mask may experience the highest levels of image distortion. Therefore, these patterns should be assisted by sidewalls of spacer patterns to improve printing robustness. Next, we present an integer linear programming-based decomposition method that avoids decomposition conflicts and sensitive trim edges simultaneously. To improve runtime and extend its application to partially decomposable layouts, too, a partitioning-based decomposition is also proposed. Our experiments reveal that the proposed methods decrease the total length of sensitive trim patterns and consequently reduce the total edge placement error significantly.
Keywords
integer programming; linear programming; nanolithography; nanopatterning; SADP decomposition; image distortion; integer linear programming; layout patterns; litho-friendly decomposition; partitioning-based decomposition; self-aligned double patterning decomposition; silico experiments; Complexity theory; Dielectrics; Etching; Layout; Lithography; Robustness; Sensitivity; Double patterning; integer linear programming (ILP); layout decomposition; self-aligned double patterning (SADP);
fLanguage
English
Journal_Title
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher
ieee
ISSN
1063-8210
Type
jour
DOI
10.1109/TVLSI.2012.2212473
Filename
6298981
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