1.02 μm vertical-cavity surface-emitting lasers for perfluorinated graded index POF communications

Author

Xiang, N. ; Rajala, L. ; Lyytikãinen, J. ; Suomalainen, S. ; Leinonen, P. ; Vainionpãã, A. ; Pessa, M.

Author_Institution

Optoelectron. Res. Centre, Tampere Univ. of Technol., Finland

fYear

2003

fDate

22-27 June 2003

Firstpage

138

Abstract

In this paper, we demonstrate the VCSEL operating at 1.02 μm for perfluorinated graded-index plastic optical fiber communication (POF) applications. The VCSEL is grown by solid-source molecular beam epitaxy. The VCSELs operate in cw mode up to chip temperature of 80°C. And the threshold current is 6.1 mA at room-temperature, corresponding to a threshold current density of 1.8 kA/cm² per quantum well. The output power is 0.7 mW at 14-mA drive current.

Keywords

gradient index optics; molecular beam epitaxial growth; optical fabrication; optical fibre communication; plastics; quantum well lasers; surface emitting lasers; 0.7 mW; 1.02 micron; 14 mA; 293 to 298 K; 6.1 mA; 80 C; perfluorinated graded index plastic optical fiber communications; quantum well; solid-source molecular beam epitaxy; vertical-cavity surface-emitting lasers; Fiber lasers; Laser modes; Molecular beam epitaxial growth; Optical fiber communication; Optical fibers; Plastics; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on

Print_ISBN

0-7803-7734-6

Type

conf

DOI

10.1109/CLEOE.2003.1312199

Filename

1312199