Title :
1.3 gm Quantum dot distributed feedback lasers based on an asymmetric InAs/GaInAs dots-in-a-well design
Author :
Deubert, S. ; Krebs, R. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
Abstract :
This paper presents the device properties of single mode distributed feedback lasers based on InGaAs/GaAs quantum dots in a well design. This laser structure was grown by solid source molecular beam epitaxy. With this improved quantum dot DFB laser with shorter facet-coated cavities a significant improvement in the dynamic properties is achieved.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium compounds; indium compounds; laser cavity resonators; laser modes; molecular beam epitaxial growth; optical design techniques; quantum dot lasers; semiconductor quantum wells; 1.3 micron; InAs-GaInAs; asymmetric InAs-GaInAs well design; dynamic property; facet-coated cavity; quantum dot distributed feedback laser; single mode laser; solid source molecular beam epitaxy; Distributed feedback devices; Gallium arsenide; Indium gallium arsenide; Laser feedback; Laser modes; Molecular beam epitaxial growth; Optical design; Quantum dot lasers; Quantum well lasers; Solid lasers;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1312234
