DocumentCode
414782
Title
1.3 gm Quantum dot distributed feedback lasers based on an asymmetric InAs/GaInAs dots-in-a-well design
Author
Deubert, S. ; Krebs, R. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution
Tech. Phys., Wurzburg Univ., Germany
fYear
2003
fDate
22-27 June 2003
Firstpage
173
Abstract
This paper presents the device properties of single mode distributed feedback lasers based on InGaAs/GaAs quantum dots in a well design. This laser structure was grown by solid source molecular beam epitaxy. With this improved quantum dot DFB laser with shorter facet-coated cavities a significant improvement in the dynamic properties is achieved.
Keywords
III-V semiconductors; distributed feedback lasers; gallium compounds; indium compounds; laser cavity resonators; laser modes; molecular beam epitaxial growth; optical design techniques; quantum dot lasers; semiconductor quantum wells; 1.3 micron; InAs-GaInAs; asymmetric InAs-GaInAs well design; dynamic property; facet-coated cavity; quantum dot distributed feedback laser; single mode laser; solid source molecular beam epitaxy; Distributed feedback devices; Gallium arsenide; Indium gallium arsenide; Laser feedback; Laser modes; Molecular beam epitaxial growth; Optical design; Quantum dot lasers; Quantum well lasers; Solid lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN
0-7803-7734-6
Type
conf
DOI
10.1109/CLEOE.2003.1312234
Filename
1312234
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