DocumentCode :
41485
Title :
Degraded Switching Characteristics of a High-Current, High-Action Reversely Switched Dynistor
Author :
Haiyang Wang ; Zhengzhong Zeng ; Xiaoping He ; Weiqing Chen ; Linshen Xie ; Fan Guo ; Junna Li ; Guowei Zhang
Author_Institution :
Northwest Inst. of Nucl. Technol., Xi´an, China
Volume :
29
Issue :
12
fYear :
2014
fDate :
Dec. 2014
Firstpage :
6245
Lastpage :
6248
Abstract :
High-voltage, high-current, and high-coulomb transfer closing switches are required for many high-pulsed power systems. This letter presents the degraded switching characteristics of a high-power reversely switched dynistor (RSD). The degraded switching characteristics of the RSD were tested with a working voltage of 10 kV, the repetition rate of 0.2 Hz, and a peak current of about 107 kA. The action is about 1.45 MA2·s. The transferred charge and energy per shot are about 20 C and 100 kJ, respectively. Only minimal changes in the leakage current and voltage drop were witnessed after a serial test of 50 000 shots. The degraded switching characteristics of the RSD were investigated based on two different methods with the special parameters of static volt-ampere characteristics and dynamic voltage drop on RSD, respectively. The degraded switching model of RSD under high-current conditions for long-pulse application was established using the method of numerical fitting. The results show that these two methods agree well with each other.
Keywords :
electric potential; leakage currents; power semiconductor switches; pulsed power switches; RSD; current 107 kA; degraded switching characteristics; high-action reversely switched dynistor; high-coulomb transfer closing switches; high-pulsed power system; leakage current; numerical fitting; voltage 10 kV; voltage drop; Energy loss; Junctions; Leakage currents; Plasma temperature; Switches; Temperature; High current; pulsed power; reversely switched dynistor (RSD); solid-state switches;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2014.2327059
Filename :
6827230
Link To Document :
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