• DocumentCode
    415403
  • Title

    Structural and electrical characterizations of long pulse XeCl excimer laser annealed Al+ ion implanted 4H-SiC

  • Author

    Dutto, C. ; Fogarassy, E. ; Mathiot, D. ; Muller, D. ; Kern, P. ; Joulie, S. ; Werckmann, J.

  • Author_Institution
    STMicroelectron., Tours, France
  • fYear
    2003
  • fDate
    22-27 June 2003
  • Firstpage
    552
  • Abstract
    In this paper, we demonstrate the possibility to anneal the Al+ ion-implantation induced damage into 4H-SiC by laser processing using a new XeCl excimer source of 200 ns pulse duration (∼ten times longer than the classical one). The laser irradiation conditions corresponding to solid phase annealing were estimated from thermal simulations and confirmed experimentally by SIMS measurements.
  • Keywords
    excimer lasers; high-speed optical techniques; hydrogen; ion implantation; laser beam annealing; optical materials; silicon compounds; wide band gap semiconductors; xenon compounds; 200 ns; SIMS measurement; SiC; XeCl; XeCl excimer source; electrical characterization; ion implantation; laser irradiation condition; laser processing; pulse XeCl excimer laser annealing; solid phase annealing; structural characterization; thermal simulation; Annealing; Fabrication; Frequency; Optical materials; Optical pulses; Pulsed laser deposition; Semiconductor device doping; Silicon carbide; Temperature; Wide band gap semiconductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
  • Print_ISBN
    0-7803-7734-6
  • Type

    conf

  • DOI
    10.1109/CLEOE.2003.1313614
  • Filename
    1313614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=415403