GaN electronics with high electron mobility transistors

The III-nitrides AlN, GaN, and InN alloys are expected to be basis of a strong development of a novel family of semiconductor devices, for optoelectronics as well as for electronics, GaN-based high electron mobility transistors (HEMTs) have shown superior power handling and operating temperatures at frequency ranges that are beyond the limits of devices fabricated from Si and other III-V materials. This paper presents the state-of-the-art GaN HEMT technology and describes the potentials for the future.