Highly reliable 32Mb FRAM with advanced capacitor technology

Author

Song, Y.J. ; Joo, H.J. ; Kang, S.K. ; Kim, H.H. ; Park, J.H. ; Kang, Y.M. ; Kang, E.Y. ; Lee, S.Y. ; Kinam Kim

Author_Institution

Samsung Electron. Co. Ltd., South Korea

Volume

1

fYear

2004

fDate

16-19 May 2004

Firstpage

393

Abstract

Highly reliable 32Mb FRAM was successfully developed by double annealing technique and CVD deposition technique. The optimized annealing method generates highly (111) oriented ferroelectric films, resulting in large remnant polarization. The CVD process provides strong interface between electrode and ferroelectric films, giving rise to minimal integration degradation and strong retention properties. After baking test at 150 °C for 100hrs, a wide sensing window of 350 mV was achieved to guarantee strong retention properties for high density FRAM products.

Keywords

CVD coatings; annealing; dielectric polarisation; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; random-access storage; 100 hr; 150 degC; 32 Mbyte; 350 mV; CVD deposition technique; advanced capacitor technology; double annealing technique; highly (111) oriented ferroelectric films; highly reliable 32Mb FRAM; large remnant polarization; minimal integration degradation; optimized annealing method; strong retention properties; Annealing; Capacitors; Degradation; Electrodes; Ferroelectric films; Nonvolatile memory; Optimization methods; Polarization; Random access memory; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. 24th International Conference on

Print_ISBN

0-7803-8166-1

Type

conf

DOI

10.1109/ICMEL.2004.1314649

Filename

1314649