• DocumentCode
    415559
  • Title

    Electrical characterization of Niy(Si1-xGex)1-y/Si1-xGex and NiSi/Si Schottky diodes

  • Author

    Saha, A.R. ; Chattopadhyay, S. ; Dalapati, G.K. ; Nandi, S.K. ; Maiti, C.K.

  • Author_Institution
    Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
  • Volume
    1
  • fYear
    2004
  • fDate
    16-19 May 2004
  • Firstpage
    401
  • Abstract
    A Schottky barrier diode has been fabricated by depositing Ni on strained-Si (grown on a graded relaxed Si1-xGex buffer layer) and characterized in the temperature range of 125K-300K for the determination of Schottky barrier height (SBH), ideality factor (n) and interface quality of the contact. The current-voltage (I-V) characteristics have been simulated using SEMICAD device simulator. To fit the experimental I-V results with the simulation, an interfacial layer and a series resistance were included in the model. The ideality factor decreases with an increase in temperature, while the barrier height increases. Transmission electron micrograph has been studied to interpret the chemical phase and morphology of the germanosilicide film.
  • Keywords
    Ge-Si alloys; Schottky barriers; Schottky diodes; elemental semiconductors; nickel compounds; semiconductor device models; silicon; technology CAD (electronics); transmission electron microscopy; 125 to 300 K; Niy(Si1-xGex)1-y-Si1-xGex; Niy(Si1-xGex)1-y/Si1-xGex; NiSi-Si; NiSi/Si Schottky diodes; SEMICAD device simulator; Schottky barrier height; chemical phase; current-voltage characteristics; electrical characterization; germanosilicide film; ideality factor; interface quality; interfacial layer; morphology; series resistance; transmission electron micrograph; Annealing; Buffer layers; CMOS technology; Electric variables; Schottky barriers; Schottky diodes; Silicidation; Silicon germanium; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2004. 24th International Conference on
  • Print_ISBN
    0-7803-8166-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2004.1314651
  • Filename
    1314651
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=415559