DocumentCode
415564
Title
Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma
Author
Todorovic, D.M. ; Smiljanic, M. ; Sarajlic, M. ; Vasiljevic-Radovic, D. ; Randjelovic, D.
Author_Institution
Center for Multidisciplinary Studies, Belgrade Univ., Serbia
Volume
2
fYear
2004
fDate
16-19 May 2004
Firstpage
429
Abstract
The effect of Ar plasma etching on the surface of Si was investigated by photoacoustic spectroscopy. The surface of Si sample (p-tip, 10 kΩcm, 420 μm) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of photoacoustic signals of Si samples Ar plasma etched and incoming Si samples indicate existence of two surface energy states (the generation-recombination centers) at 0.31 and 0.99 eV.
Keywords
elemental semiconductors; photoacoustic spectra; silicon; sputter etching; surface states; 0.31 eV; 0.75 to 1.55 eV; 0.99 eV; 10 kohmcm; 2 to 80 min; 420 micron; Ar plasma; Si; Si surface; photoacoustic spectroscopy; plasma etching; sputter damage; surface energy states; Argon; Energy measurement; Energy states; Phase measurement; Plasma applications; Plasma measurements; Signal generators; Spectroscopy; Sputter etching; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2004. 24th International Conference on
Print_ISBN
0-7803-8166-1
Type
conf
DOI
10.1109/ICMEL.2004.1314853
Filename
1314853
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