• DocumentCode
    415633
  • Title

    Degradation of ultra-thin oxides with tungsten gates under high voltage: wear-out and breakdown transient

  • Author

    Palumbo, F. ; Lombardo, S. ; Stathis, J.H. ; Narayanan, Vijaykrishnan ; McFeely, F.R. ; Yurkas, J.J.

  • Author_Institution
    Sezione di Catania, CNR-IMM, Catania, Italy
  • fYear
    2004
  • fDate
    25-29 April 2004
  • Firstpage
    122
  • Lastpage
    125
  • Abstract
    An analysis of the dynamics of degradation of ultra-thin gate SiO2 films under accelerated high voltage stress, from the growth of defect concentration up to the final phase of the oxide breakdown, was performed on MOS samples with Tungsten as gate material.
  • Keywords
    MOSFET; dielectric thin films; electric breakdown; semiconductor device breakdown; semiconductor device reliability; silicon compounds; tungsten; tunnelling; SiO2; W gates; accelerated high voltage stress; breakdown transient; ultra-thin gate SiO2 films; ultra-thin oxides degradation; wear-out transient; Anodes; Breakdown voltage; Degradation; Hydrogen; Kinetic theory; Performance analysis; Pulse measurements; Stress; Tungsten; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
  • Print_ISBN
    0-7803-8315-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.2004.1315311
  • Filename
    1315311
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=415633