DocumentCode
415642
Title
Hot-carrier stress induced low-frequency noise degradation in 0.13 μm and 0.18 μm RF CMOS technologies
Author
Jin, Zhensong ; Cressler, John D. ; Abadeer, Wag ; Liu, Xuefeng ; Hauser, Michael ; Joseph, Alvin J.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2004
fDate
25-29 April 2004
Firstpage
440
Lastpage
444
Abstract
We investigate the impact of hot-carrier stress on the low-frequency noise characteristics of two different scaled RF CMOS technologies. The nFETs and pFETs for both 0.13 μm and 0.18 μm RF CMOS technologies show a different dc and low-frequency noise degradation response after time-dependent hot-carrier stressing. The underlying noise degradation mechanisms are investigated with the aid of 2-D device-level microscopic noise simulation.
Keywords
CMOS integrated circuits; hot carriers; integrated circuit modelling; integrated circuit noise; integrated circuit reliability; 0.13 μm RF CMOS technologies; 0.13 micron; 0.18 μm RF CMOS technologies; 0.18 micron; hot-carrier stress induced low-frequency noise degradation; CMOS technology; Circuit noise; Degradation; Hot carriers; Low-frequency noise; Phase noise; Radio frequency; Semiconductor device noise; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN
0-7803-8315-X
Type
conf
DOI
10.1109/RELPHY.2004.1315368
Filename
1315368
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