Title :
Neutron-induced SEU in bulk and SOI SRAMS in terrestrial environment
Author :
Baggio, J. ; Lambert, D. ; Ferlet-Cavrois, V. ; D´hose, C. ; Hirose, K. ; Saito, H. ; Palau, J.M. ; Saignè, F. ; Sagnes, B. ; Buard, N. ; Carrière, T.
Author_Institution :
CEA, France
Abstract :
In this work we compare the Soft Error Rate (SER) sensitivity of commercial bulk and SOI devices in the terrestrial neutron environment. The SOI parts exhibit very low SER values that we explain by using Monte Carlo simulations.
Keywords :
Monte Carlo methods; SRAM chips; integrated circuit modelling; integrated circuit reliability; neutron effects; radiation hardening (electronics); silicon-on-insulator; Monte Carlo simulations; SOI SRAMS; Soft Error Rate; neutron-induced SEU; single event upset; terrestrial environment; Atmosphere; Cosmic rays; DH-HEMTs; Error analysis; Laboratories; Low voltage; Neutrons; Performance evaluation; Random access memory; Single event upset;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315447
