• DocumentCode
    415662
  • Title

    Localized transient charging and it´s implication on the hot carrier reliability of HfSiON MOSFETs

  • Author

    Lee, B.H. ; Sim, J.H. ; Choi, Rino ; Bersuker, G. ; Matthew, K. ; Moumen, N. ; Peterson, J.J. ; Larson, L.

  • fYear
    2004
  • fDate
    25-29 April 2004
  • Firstpage
    691
  • Lastpage
    692
  • Abstract
    Hot carrier reliability of poly-gated and TiN-gated MOSFETs with HfSiON gate dielectric is studied. For short channel devices, worse degradation of HfSiON occurs at Vg=Vd while oxide devices are degraded more at Vg=Vd/2 similar to oxide control devices. Localized transient charging at the drain comer of the HfSiON layer is proposed to explain the channel length dependence and time dependent relaxation of HC reliability characteristics.
  • Keywords
    MOSFET; dielectric thin films; electric breakdown; hafnium compounds; semiconductor device breakdown; semiconductor device reliability; titanium compounds; HfSiON; HfSiON MOSFETs; TiN; TiN-gated; channel length dependence; degradation; drain corner; hot carrier reliability; localized transient charging; poly-gated MOSFETs; short channel devices; time dependent relaxation; Degradation; Fabrication; Hafnium; High K dielectric materials; High-K gate dielectrics; Hot carriers; Impact ionization; MOSFETs; Stress; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
  • Print_ISBN
    0-7803-8315-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.2004.1315454
  • Filename
    1315454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=415662