DocumentCode :
416001
Title :
Development of low-k interlayer dielectric film for embedded passives and actives integral substrates
Author :
Uwada, Kazuki ; Nitto, Y.
Author_Institution :
Core Technol. Center, Nitto Denko Corp., Osaka, Japan
Volume :
1
fYear :
2004
fDate :
1-4 June 2004
Firstpage :
521
Abstract :
We have developed a novel thermosetting resin that has a low elastic modulus, low dielectric constant and low dielectric loss. Using this material, we have developed an interlayer dielectric film that could be used for embedded passives and actives integral substrates. We have studied the properties of embedded devices, interlayer connection methods and substrate reliability. Our results indicate that it is possible to embed devices using low temperature and low pressure (150°C, 0.1 MPa) with no voids. In this paper, the physical and embedding properties of the interlayer dielectric film we have developed, interlayer connecting method and substrate reliability are discussed. In addition, we propose a simple manufacturing process for embedded passives and actives integral substrates using the interlayer dielectric film.
Keywords :
dielectric losses; dielectric thin films; elastic moduli; electronics packaging; permittivity; reliability; resins; substrates; 0.1 MPa; 150 degC; dielectric constant; dielectric loss; elastic modulus; embedded passives/actives integral substrates; interlayer connection methods; low pressure processing; low temperature processing; low-k interlayer dielectric film; manufacturing process; substrate reliability; thermosetting resin; Dielectric constant; Dielectric films; Dielectric losses; Dielectric materials; Dielectric substrates; Electronic components; Electronic packaging thermal management; Filling; Resins; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2004. Proceedings. 54th
Print_ISBN :
0-7803-8365-6
Type :
conf
DOI :
10.1109/ECTC.2004.1319388
Filename :
1319388
Link To Document :
بازگشت