• DocumentCode
    416154
  • Title

    A novel SiGe BiCMOS variable-gain active predistorter using current steering topologies

  • Author

    Tsai, Jeng-Han ; Huang, Tian-Wei

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2004
  • fDate
    6-8 June 2004
  • Firstpage
    559
  • Lastpage
    562
  • Abstract
    This paper presents the novel design of a 2.4-GHz variable-gain active predistorter (PD) using a 0.35-μm SiGe BiCMOS technology. Current steering topologies are selected for this design to provide dual functions of: (1) an active predistorter for power amplifier linearization; and (2) a variable gain amplifier (VGA) for transmitter power control. Unlike other traditional "passive" predistorters, this active predistorter does not need an additional buffer amplifier to compensate the loss. Furthermore, through the bias voltage control in the low current region, the amount of gain expansion from this predistorter becomes programmable, to compensate for the PA non-linearity. Finally, this variable-gain predistorter could be used as a VGA in a multi-stage power amplifier design and it is well suitable for RF-SOC applications. The PA experimental results of 16-QAM modulated signals show that the compressed constellation can be uniformly spread out into a "square", the spectral re-growth is suppressed by 7-9 dB, and the EVM can be reduced from 9.9 % to 5.7 %.
  • Keywords
    BiCMOS analogue integrated circuits; Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; linearisation techniques; semiconductor materials; 0.35 micron; 16-QAM modulated signals; 2.4 GHz; BiCMOS predistorter; EVM reduction; PA nonlinearity compensation; RFIC; SiGe; VGA; compressed constellation uniform spreading; current steering topology; low current region bias voltage control; power amplifier linearization; programmable gain expansion; spectral re-growth suppression; transmitter power control; variable gain amplifier; variable-gain active predistorter; BiCMOS integrated circuits; Constellation diagram; Gain; Germanium silicon alloys; Power amplifiers; Power control; Silicon germanium; Topology; Transmitters; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
  • ISSN
    1529-2517
  • Print_ISBN
    0-7803-8333-8
  • Type

    conf

  • DOI
    10.1109/RFIC.2004.1320682
  • Filename
    1320682