Magnetoelectric Flexural Gate Transistor With Nanotesla Sensitivity

Author

Feng Li ; Misra, Rajiv ; Zhao Fang ; Yufei Wu ; Schiffer, P. ; Qiming Zhang ; Tadigadapa, Srinivas ; Datta, Soupayan

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA

Volume

22

Issue

1

fYear

2013

fDate

Feb. 2013

Firstpage

71

Lastpage

79

Abstract

Magnetic sensors capable of detecting tiny ac magnetic fields ranging from microtesla to picotesla are of great interest. In this paper, we demonstrate an integrated magnetoelectric (ME) flexural gate transistor with nanotesla magnetic field detection sensitivity at room temperature. The device capacitively couples a Metglas (Fe_0.85B_0.05Si_0.1)-based magnetostrictive unimorph micromechanical cantilever beam to the gate of an n-channel field-effect transistor. Using this sensor configuration, a sensitivity of 0.23 mV/μT and a minimum detectable field of 60 nT/√Hz at 1 Hz and 1.5 mV/μT and 150 pT/√Hz at the flexural resonance of the cantilever structure of 4.9 kHz were obtained. The results demonstrate a significant improvement in the thin-film ME sensor integration with standard CMOS process and open the possibility of monolithic magnetic sensor arrays fabrication for biomedical imaging applications.

Keywords

CMOS integrated circuits; cantilevers; field effect transistors; magnetic sensors; magnetostrictive devices; microsensors; thin film sensors; CMOS process; Fe_0.85B_0.05Si_0.1; Metglas-based magnetostrictive unimorph micromechanical cantilever beam; ac magnetic field detection; biomedical imaging applications; integrated ME flexural gate transistor; integrated magnetoelectric flexural gate transistor; monolithic magnetic sensor array fabrication; n-channel field-effect transistor; nanotesla magnetic field detection sensitivity; temperature 293 K to 298 K; thin-film ME sensor; Amorphous magnetic materials; Logic gates; Magnetic resonance imaging; Magnetoelectric effects; Magnetostriction; Transistors; ME flexural gate transistor (MEFGT); Magnetoelectric (ME); Metglas $(hbox{Fe}_{0.85}hbox{B}_{0.05} hbox{Si}_{0.1})$ thin films; magnetostriction; microelectromechanical systems (MEMS);

fLanguage

English

Journal_Title

Microelectromechanical Systems, Journal of

Publisher

ieee

ISSN

1057-7157

Type

jour

DOI

10.1109/JMEMS.2012.2215012

Filename

6301667