DocumentCode
417079
Title
Calibration and characterization of 900 nm silicon narrow-band radiation thermometers
Author
Sakuma, Fumihiro ; Ma, Laina
Author_Institution
Nat. Metrol. Inst. of Japan, Tsukuba, Japan
Volume
2
fYear
2003
fDate
4-6 Aug. 2003
Firstpage
2182
Abstract
This paper describes the calibration and characterization of the 900 nm standard radiation thermometers. Two methods are used for the calibration. One is the four fixed-point calibration and the other is the spectral responsivity calibration according to the ITS-90. Characterizations of the radiation thermometers for the size-of-source effect, distance effect, ambient temperature effect, zero offset, stability, are also shown.
Keywords
calibration; elemental semiconductors; silicon; spectral methods of temperature measurement; thermometers; transfer standards; 900 nm; Si; ambient temperature effect; distance effect; fixed point calibration; narrow band radiation thermometers; size of source effect; spectral responsivity calibration; stability; standard radiation thermometers; zero offset;
fLanguage
English
Publisher
ieee
Conference_Titel
SICE 2003 Annual Conference
Conference_Location
Fukui, Japan
Print_ISBN
0-7803-8352-4
Type
conf
Filename
1324322
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