• DocumentCode
    417079
  • Title

    Calibration and characterization of 900 nm silicon narrow-band radiation thermometers

  • Author

    Sakuma, Fumihiro ; Ma, Laina

  • Author_Institution
    Nat. Metrol. Inst. of Japan, Tsukuba, Japan
  • Volume
    2
  • fYear
    2003
  • fDate
    4-6 Aug. 2003
  • Firstpage
    2182
  • Abstract
    This paper describes the calibration and characterization of the 900 nm standard radiation thermometers. Two methods are used for the calibration. One is the four fixed-point calibration and the other is the spectral responsivity calibration according to the ITS-90. Characterizations of the radiation thermometers for the size-of-source effect, distance effect, ambient temperature effect, zero offset, stability, are also shown.
  • Keywords
    calibration; elemental semiconductors; silicon; spectral methods of temperature measurement; thermometers; transfer standards; 900 nm; Si; ambient temperature effect; distance effect; fixed point calibration; narrow band radiation thermometers; size of source effect; spectral responsivity calibration; stability; standard radiation thermometers; zero offset;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SICE 2003 Annual Conference
  • Conference_Location
    Fukui, Japan
  • Print_ISBN
    0-7803-8352-4
  • Type

    conf

  • Filename
    1324322