• DocumentCode
    417083
  • Title

    Emissivity measurement of silicon semiconductor wafer near room temperature

  • Author

    Sugawara, Hiroshi ; Ohkubo, Tomohiro ; Fukushima, Tadakazu ; Iuchi, Tohru

  • Author_Institution
    Toyo Univ., Kawagoe, Japan
  • Volume
    2
  • fYear
    2003
  • fDate
    4-6 Aug. 2003
  • Firstpage
    2201
  • Abstract
    Emissivity behaviors of a silicon semiconductor wafer near room temperature have been measured and considered from the view point of spectral, directional and polarized properties. The silicon wafer near room temperature is semitransparent at a wavelength more than 1.1 /spl mu/m, which makes emissivity behaviors complicated. Modeling of emissivities is proposed and compared with experimental results.
  • Keywords
    elemental semiconductors; emissivity; light polarisation; semiconductor thin films; silicon; spectral methods of temperature measurement; thermal variables measurement; 293 to 298 K; emissivity measurement; emissivity modeling; polarisation; room temperature; silicon semiconductor wafer; spectral properties;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SICE 2003 Annual Conference
  • Conference_Location
    Fukui, Japan
  • Print_ISBN
    0-7803-8352-4
  • Type

    conf

  • Filename
    1324326