A CMOS bandgap reference with correction for device-to-device variation

Author

Tadeparthy, Preetam

Author_Institution

Texas Instruments PVT. LTD., Bangalore, India

Volume

1

fYear

2004

fDate

23-26 May 2004

Abstract

A circuit technique for compensating the device-to-device variation in bandgap voltage references is presented. The circuit senses the variation of V_be of the transistor with process and pumps into the emitter a PTAT current in direction opposite to the variation to bring it back to the right value. It also exploits the temperature coeff. of MOS V_t to compensate for higher order temperature variations. Silicon results show a variation of 60 mV across different lots and less than 50 PPM across temperature (-40° to 130°C). The prototype was built in a 0.18u CMOS digital process with low β PNP transistors.

Keywords

CMOS digital integrated circuits; bipolar transistors; elemental semiconductors; integrated circuit design; reference circuits; silicon; temperature control; 60 mV; CMOS bandgap reference; MOS voltage; PTAT current; Si; bandgap voltage reference; circuit technique; device-to-device variation correction; emitter; silicon; temperature coeff; temperature variation compensation; voltage variation compensation; CMOS process; Circuits; Fuses; Instruments; Mass production; Photonic band gap; Prototypes; Silicon; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on

Print_ISBN

0-7803-8251-X

Type

conf

DOI

10.1109/ISCAS.2004.1328215

Filename

1328215