Title :
A CMOS bandgap reference with correction for device-to-device variation
Author :
Tadeparthy, Preetam
Author_Institution :
Texas Instruments PVT. LTD., Bangalore, India
Abstract :
A circuit technique for compensating the device-to-device variation in bandgap voltage references is presented. The circuit senses the variation of Vbe of the transistor with process and pumps into the emitter a PTAT current in direction opposite to the variation to bring it back to the right value. It also exploits the temperature coeff. of MOS Vt to compensate for higher order temperature variations. Silicon results show a variation of 60 mV across different lots and less than 50 PPM across temperature (-40° to 130°C). The prototype was built in a 0.18u CMOS digital process with low β PNP transistors.
Keywords :
CMOS digital integrated circuits; bipolar transistors; elemental semiconductors; integrated circuit design; reference circuits; silicon; temperature control; 60 mV; CMOS bandgap reference; MOS voltage; PTAT current; Si; bandgap voltage reference; circuit technique; device-to-device variation correction; emitter; silicon; temperature coeff; temperature variation compensation; voltage variation compensation; CMOS process; Circuits; Fuses; Instruments; Mass production; Photonic band gap; Prototypes; Silicon; Temperature sensors; Voltage;
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
DOI :
10.1109/ISCAS.2004.1328215
