• DocumentCode
    418010
  • Title

    Floating gate comparator with automatic offset manipulation functionality

  • Author

    Wong, Eric Liu ; Abshire, Pamela A. ; Cohen, Marc H.

  • Author_Institution
    Inst. for Syst. Res., Maryland Univ., College Park, MD, USA
  • Volume
    1
  • fYear
    2004
  • fDate
    23-26 May 2004
  • Abstract
    We present a voltage comparator that uses nonvolatile floating gate charge storage for either offset ing or automatic programming of a desired offset. We demonstrate the ability to reduce the variance of the initial offset and to accurately program a desired offset. We exploit the negative feedback functionality of pFET hot-electron injection to achieve fully automatic offset cancellation. The design has been fabricated in a commercially available 0.35 μm process. Experimental results confirm the ability to reduce the variance of the initial offset by 2 to 3 orders of magnitude and to accurately define a desired offset with maximum observed deviation of 728 μV and typical deviation of 109 μV. We achieve adaptation with settling time of 50 ms, which is inversely proportional to the exponential of the injection voltage. We achieve controlled injection to accurately program the input offset to voltages uniformly distributed from -1 V to 1 V. The comparator exhibits a 5 ns propagation delay.
  • Keywords
    comparators (circuits); feedback; hot carriers; integrated circuit design; integrated circuit modelling; power field effect transistors; -1 to 1 V; 0.35 micron; 109 muV; 5 ns; 50 ms; 728 muV; automatic offset cancellation; automatic offset manipulation; automatic programming; comparator design fabrication; floating gate comparator; hot-electron injection; injection voltage; input offset programming; negative feedback functionality; nonvolatile floating gate charge storage; offset definition; offset ing; offset variance reduction; pFET; propagation delay; settling time; voltage comparator; Automatic programming; Circuits; Clocks; Educational institutions; Negative feedback; Nonvolatile memory; Secondary generated hot electron injection; Storage automation; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
  • Print_ISBN
    0-7803-8251-X
  • Type

    conf

  • DOI
    10.1109/ISCAS.2004.1328248
  • Filename
    1328248