DocumentCode
418220
Title
Resonant tunnelling diode based QMOS edge triggered flip-flop design
Author
Zhang, Hui ; Mazumder, Pinaki ; Yang, Kyounghoon
Author_Institution
Dept. of EECS, Michigan Univ., Ann Arbor, MI, USA
Volume
3
fYear
2004
fDate
23-26 May 2004
Abstract
Resonant tunnelling diode (RTD) is well known as an ultra-fast device due to small intrinsic capacitance, large drive current was well as the high switching speed. Pair of RTDs has self-latching property, which makes RTD a very promising candidate for nano-pipelining circuit design. The most pervasive used RTD-based sequential logic is MOBILE. However, MOBILE is a return-to-zero mode circuit, which makes it difficult to be used in some specific applications. In this paper, we proposed three quantum MOS (QMOS) flip-flop designs. Our designs explore the advantage of MOBILE while keeping the output to a holding stage instead of return-to-zero. The circuit topologies and circuit operations are described and discussed. The performance of these circuits is evaluated by using HSPICE. Then the final results are compared with each other.
Keywords
MOS logic circuits; SPICE; flip-flops; resonant tunnelling diodes; HSPICE; MOBILE; QMOS; RTD-based sequential logic; circuit operations; circuit topologies; drive current; edge triggered flip-flop; holding stage; intrinsic capacitance; nano-pipelining circuit; quantum MOS flip-flop; resonant tunnelling diode; return-to-zero mode circuit; self-latching property; switching speed; ultra-fast device; Circuit optimization; Clocks; Diodes; Driver circuits; Flip-flops; Latches; Logic; MOSFETs; Resonant tunneling devices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN
0-7803-8251-X
Type
conf
DOI
10.1109/ISCAS.2004.1328844
Filename
1328844
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