• DocumentCode
    418220
  • Title

    Resonant tunnelling diode based QMOS edge triggered flip-flop design

  • Author

    Zhang, Hui ; Mazumder, Pinaki ; Yang, Kyounghoon

  • Author_Institution
    Dept. of EECS, Michigan Univ., Ann Arbor, MI, USA
  • Volume
    3
  • fYear
    2004
  • fDate
    23-26 May 2004
  • Abstract
    Resonant tunnelling diode (RTD) is well known as an ultra-fast device due to small intrinsic capacitance, large drive current was well as the high switching speed. Pair of RTDs has self-latching property, which makes RTD a very promising candidate for nano-pipelining circuit design. The most pervasive used RTD-based sequential logic is MOBILE. However, MOBILE is a return-to-zero mode circuit, which makes it difficult to be used in some specific applications. In this paper, we proposed three quantum MOS (QMOS) flip-flop designs. Our designs explore the advantage of MOBILE while keeping the output to a holding stage instead of return-to-zero. The circuit topologies and circuit operations are described and discussed. The performance of these circuits is evaluated by using HSPICE. Then the final results are compared with each other.
  • Keywords
    MOS logic circuits; SPICE; flip-flops; resonant tunnelling diodes; HSPICE; MOBILE; QMOS; RTD-based sequential logic; circuit operations; circuit topologies; drive current; edge triggered flip-flop; holding stage; intrinsic capacitance; nano-pipelining circuit; quantum MOS flip-flop; resonant tunnelling diode; return-to-zero mode circuit; self-latching property; switching speed; ultra-fast device; Circuit optimization; Clocks; Diodes; Driver circuits; Flip-flops; Latches; Logic; MOSFETs; Resonant tunneling devices; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
  • Print_ISBN
    0-7803-8251-X
  • Type

    conf

  • DOI
    10.1109/ISCAS.2004.1328844
  • Filename
    1328844