Four-channel SiGe transimpedance amplifier array for parallel optical interconnects

Author

Park, Sung Min

Author_Institution

Dept. of Inf. Electron. Eng., Ewha Woman´´s Univ., Seoul, South Korea

Volume

4

fYear

2004

fDate

23-26 May 2004

Abstract

A four-channel transimpedance amplifier array is realized in a 0.8 μm Si/SiGe HBT technology for parallel optical interconnect applications. Measured results demonstrate that each channel provides a bandwidth of 3.9 GHz, a transimpedance gain of 62 dBΩ, and an average noise current spectral density of 7.5 pA/√Hz. The array achieves less than -25 dB crosstalk between adjacent channels and dissipates 40 mW in total from ±2.5 V supply.

Keywords

Ge-Si alloys; bipolar digital integrated circuits; elemental semiconductors; heterojunction bipolar transistors; integrated circuit noise; integrated optoelectronics; optical arrays; optical crosstalk; optical interconnections; optical noise; optical receivers; photodiodes; semiconductor optical amplifiers; silicon; 0.8 micron; 2.5 V; 3.9 GHz; 40 mW; Si-GeSi; Si-SiGe HBT technology; adjacent channels; crosstalk; four-channel SiGe transimpedance amplifier array; noise current; parallel optical interconnects; spectral density; transimpedance gain; Crosstalk; Current measurement; Density measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Optical amplifiers; Optical arrays; Optical interconnections; Semiconductor optical amplifiers; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on

Print_ISBN

0-7803-8251-X

Type

conf

DOI

10.1109/ISCAS.2004.1328978

Filename

1328978