Title :
A new intelligent gate drive module for IGBTs with high current drive capacity
Author :
Yan, Xmiang ; Patterson, Dean ; Sable, Dan ; Hua, Guichao
Author_Institution :
Sch. of Electr. Eng., Northern Territory Univ., Darwin, NT, Australia
Abstract :
This paper presents a new intelligent gate drive module for IGBTs, with current drive capacity of over 6 amperes. The intelligent functions of this module include under voltage lockout protection and overcurrent protection with fault status annunciation. The module contains dual drivers which make it especially suitable for phase leg drive, and outputs bipolar signals so that the "off" status of the IGBT is ensured when the IGBT is required to be "off". It needs only a unipolar DC supply due to the built-in, well-regulated, and isolated floating power supply. This module features powerful functions, high performance, wide applications, and convenience of use. The detailed functions, operation, performance, and practical application issues are addressed.
Keywords :
insulated gate bipolar transistors; invertors; overcurrent protection; overvoltage protection; IGBT; current drive capacity; dual driver; fault protection; intelligent gate drive module; inverter; overcurrent protection; phase leg drive; unipolar DC power supply; voltage lockout protection; Circuits; Current density; Insulated gate bipolar transistors; Leg; Low voltage; MOSFETs; Power electronics; Power supplies; Power system reliability; Protection;
Conference_Titel :
Power Electronic Drives and Energy Systems for Industrial Growth, 1998. Proceedings. 1998 International Conference on
Print_ISBN :
0-7803-4879-6
DOI :
10.1109/PEDES.1998.1330034